symbol v ds v gs i dm t j , t stg symbol typ max 48 62.5 74 110 r jl 33 40 w junction and storage temperature range a p d c 2 1.28 -55 to 150 t a =70c i d continuous drain current a maximum units parameter t a =25c t a =70c 30 maximum junction-to-ambient a steady-state 8.5 6.5 40 c/w absolute maximum ratings t a =25c unless otherwise noted v v 25 pulsed drain current b power dissipation t a =25c gate-source voltage drain-source voltage maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w AO4816 features v ds (v) = 30v i d = 8.5a r ds(on) < 17m ? (v gs = 20v) r ds(on) < 20m ? (v gs = 10v) r ds(on) < 46m ? (v gs = 4.5v) the AO4816 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this dual device is suitable for use as a load switch or in pwm applications. standard product AO4816 is pb- free (meets rohs & sony 259 specifications). AO4816l is a green product ordering option. AO4816 and AO4816l are electrically identical. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 g1 d1 s1 g2 d2 s2 soic-8 dual n-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 4
AO4816 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.4 3 v i d(on) 30 a 13.5 17 t j =125c 17.5 22 16 20 m : 36 46 m : g fs 10 17 s v sd 0.76 1 v i s 4.3 a c iss 758 pf c oss 180 pf c rss 128 pf r g 0.7 : q g (10v) 16.5 nc q g (4.5v) 8.6 nc q gs 2.5 nc q gd 4.8 nc t d(on) 5.4 ns t r 5.1 ns t d(off) 14.4 ns t f 3.7 ns t rr 16.9 ns q rr 6.6 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =8.5a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 : , r gen =3 : turn-off fall time total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz m : v gs =4.5v, i d =5a i s =1a,v gs =0v v ds =5v, i d =10a v gs =10v, i d =8.5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss p a gate threshold voltage v ds =v gs i d =250 p a v ds =24v, v gs =0v v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =8.5a, di/dt=100a/ p s drain-source breakdown voltage on state drain current i d =250 p a, v gs =0v v gs =10v, v ds =5v v gs =20v, i d =8.5a reverse transfer capacitance i f =8.5a, di/dt=100a/ p s a: the value of r t ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t ? 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r t ja is the sum of the thermal impedence from junction to lead r t jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 p s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev4: august 2005 www.freescale.net.cn 2 / 4
AO4816 typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 45 50 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 5v 6v 10v 0 5 10 15 20 25 30 2 2.5 3 3.5 4 4.5 5 5.5 v gs (volts) figure 2: transfer characteristics i d (a) 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =20 v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =20v 0 10 20 30 40 50 60 0 5 10 15 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8.5a 25c 125c 7v i d =8.5a www.freescale.net.cn 3 / 4
AO4816 typical electrical and thermal characteristics 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc t j(max) =150c t a =25c r ds(on) limited v ds =15v i d =8.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 4
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